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RB481Y
　
Data Sheet
0.01
0.1
1
10
100
1000
10000
100000
0 1020301
0 5 10 15 20
Ta=125℃
Ta=75℃
Ta=25℃
Ta=-25℃
FORWARD VOLTAGE：VF(mV)
VF-IF CHARACTERISTICS
FORWARD CURRENT:IF(mA)
REVERSE CURRENT:IR(uA)
REVERSE VOLTAGE：VR(V)
VR-IR CHARACTERISTICS
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
VF DISPERSION MAP
FORWARD VOLTAGE:VF(mV)
REVERSE CURRENT:VR(uA)
IR DISPERSION MAP
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
Ct DISPERSION MAP
IFSM DISPERSION MAP
PEAK SURGE
FORWARD CURRENT:IFSM(A)
PEAK SURGE
FORWARD CURRENT:IFSM(A)
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
PEAK SURGE
FORWARD CURRENT:IFSM(A)
TIME:t(ms)
IFSM-t CHARACTERISTICS
TIME:(s)
Rth-t CHARACTERISTICS
TRANSIENT
THAERMAL IMPEDANCE:Rth (
℃
/W)
FORWARD POWER
DISSIPATION:Pf(W)
AVERAGE RECTIFIED
FORWARD CURRENT：Io(A)
Io-Pｆ
CHARACTERISTICS
REVERSE POWER
DISSIPATIONP
R
(w)
REVERSE VOLTAGE：VR(V)
VR-PR
CHARACTERISTICS
0.001
0.01
0.1
1
10
100
1000
0 100 200 300 400 500
Ta=125℃
Ta=75℃
Ta=25℃
Ta=-25℃
0
5
10
15
20
25
30
35
40
45
50
Ta=25℃
VR=10V
n=30pcs
AVE:4.775uA
25
26
27
28
29
30
31
32
33
34
35
AVE:29.58pF
0
5
10
15
20
AVE:5.60A
8.3ms
Ifsm
1cyc
0
5
10
1 10 100
8.3ms
8.3ms
Ifsm
1cyc
0
5
10
1 10 100
t
Ifsm
10
100
1000
0.001 0.1 10 1000
Rth(j-a)
Rth(j-c)
1ms
IM=10mA
IF=100mA
300us
time
Mounted on epoxy board
0
0.1
0.2
0.3
0 0.1 0.2 0.3 0.4 0.5
0
0.1
0.2
0.3
0.4
0.5
0 102030
Sin(θ＝180)
D=1/2
DC
10
100
f=1MHz
Ta=25℃
f=1MHz
VR=0V
n=10pcs
310
320
330
340
350
360
AVE:340.2mV
Ta=25℃
IF=100mA
n=30pcs
DC
D=1/2
Sin(θ＝180)
Per chip
Per chip
www.rohm.com
?2009 ROHM Co., Ltd. All rights reserved.
2/3
2009.02 - Rev.D
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